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更新时间：2021-10-14 15:49
首页 > 产品中心 > 成都华光瑞芯微电子股份有限公司 > RF switch > RF switch HG133K-2/HG133K-2(M)
RF switch HG133K-2/HG133K-2(M)

RF switch HG133K-2/HG133K-2(M)

成都华光瑞芯微电子股份有限公司 - 企业简介点击 RF switch
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, 查看详情 》
  • HG133K-2/HG133K-2(M)
    封装：HG133K-2/HG133K-2(M)
  • 265次
    浏览器次数：265次
  • 在产
    生命周期：在产
  • 2021年
    发布时间：2021
  • 0.00
    参考价格： 0.00
by Jihzx.com

RF switch HG133K-2/HG133K-2(M) 厂家介绍

供应商名称：成都华光瑞芯微电子股份有限公司

成都华光瑞芯微电子股份有限公司是国内领先的微波射频芯片（MMIC）和模拟芯片研发生产商。凭借经验丰富的研发团队、卓越的技术实力和先进的生产工艺，已在微波射频领域处于业界领先水平。公司是中国半导体行业协会成员和四川省高新技术企业，并被工信部认定为集成电路设计企业，荣获“全国微电子技术产业知名品牌示范单位”称号。







公司主营产品为采用GaAs PHEMT/HBT、GaN HEMT、CMOS、SiGe BiCMOS工艺制作的微波射频芯片和模拟芯片，频率覆盖范围达DC-100GHz，具有频带宽、功耗低、集成度高、成本低、供货周期短等独特优势，已形成超宽带、低功耗系列等多种特色产品，同时可提供环行器隔离器和微波毫米波SIP组件。这些产品在无线通信、汽车电子、物联网等市场领域得到了广泛应用。公司现有微波射频芯片后道工艺和微组装生产线，万级净化间达2000m2，可分别对6-8英寸晶圆进行后道工序处理， 具备50万只的微波射频芯片和组件的年生产能力。







华光瑞芯将继续立足于自我创新的发展思路，持续研发性能优越、质量可靠、价格合理的微波射频产品，提供一流的技术服务，一如既往地坚持为客户提供更好的解决方案，创造更大价值。

RF switch HG133K-2/HG133K-2(M) 资料规格参数

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RF switch HG166KB
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成都华光瑞芯微电子股份有限公司
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1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,
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RF switch HG146KB/HG146KB(M)
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HG146KB/HG146KB(M)
成都华光瑞芯微电子股份有限公司
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1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,
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RF switch HG145KC-1
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成都华光瑞芯微电子股份有限公司
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1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,
0.00
RF switch HG137KA
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HG137KA
成都华光瑞芯微电子股份有限公司
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1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,
0.00
RF switch HG134KA-1
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HG134KA-1
成都华光瑞芯微电子股份有限公司
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1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,
0.00
RF switch HG133K-2/HG133K-2(M)
RF switch
HG133K-2/HG133K-2(M)
成都华光瑞芯微电子股份有限公司
RF switch
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,
0.00
RF switch HG127KD
RF switch
HG127KD
成都华光瑞芯微电子股份有限公司
RF switch
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,
0.00
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