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更新时间：2023-05-05 15:31

首页 > 产品中心 > 成都通量科技有限公司 > RF switch > RF switch FW3104

RF switch FW3104

RF switch FW3104

成都通量科技有限公司 - 企业简介点击 RF switch

Broadband: 0.1-6GHz；Low insertion loss:&amp;lt;1dB；High isolation: &amp;gt;25dB；High linearity: 60dBm；查看详情》

FW3104
封装：FW3104
125次
浏览器次数：125次
在产
生命周期：在产
2021年
发布时间：2021
0.00
参考价格： 0.00

by Jihzx.com

厂家介绍
规格参数
数据手册

RF switch FW3104 厂家介绍

RF switch FW3104 资料规格参数

参数列表

技术参数

Broadband: 0.1-6GHz；Low insertion loss:&amp;lt;1dB；High isolation: &amp;gt;25dB；H

封装参数

DFN 2×2 mm，compatible RFSW8000

外形尺寸

DFN 2×2 mm，compatible RFSW8000

符合标准

EU ROHS DirectiveEU REACH regulationsHalogen-free (fluorine, chlorine, Australia, iodine)“

其他参数

Typical ApplicationsMacro base station, small base station? WiFi, WiMAX system? ISM band transceiver

产品图册

RF switch FW3104

RF switch相册

产品概述

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RF switch FW3104 数据手册

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FW3104产品手册 V1.4.pdf 2023-05-05 15:31 查看

RF switch FW3104 相关器件

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RF switch FW3104

RF switch

成都通量科技有限公司

DFN 2×2 mm，compatible RFSW8000

Broadband: 0.1-6GHz；Low insertion loss:&amp;lt;1dB；High isolation: &amp;gt;25dB；High linearity: 60dBm；

0.00

RF switch FW3103

RF switch

成都通量科技有限公司

QFN 4×4 mm，compatible QPC6044

Broadband:0.1-6GHz；Low insertion loss:&amp;amp;lt;1dB；High isolation:&amp;amp;gt;60dB；High linearity: 60dBm；

0.00

RF switch FW3101

RF switch

成都通量科技有限公司

QFN 4×4 mm，compatible RFSW6024

Broadband: 0.1-6GHz；Low insertion loss:&amp;amp;lt;1dB；High isolation: &amp;amp;gt;60dB；High linearity: 60dBm；

0.00

RF switch HG166KB

RF switch

成都华光瑞芯微电子股份有限公司

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,

0.00

RF switch HG146KB/HG146KB(M)

RF switch

成都华光瑞芯微电子股份有限公司

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,

0.00

RF switch HG145KC-1

RF switch

成都华光瑞芯微电子股份有限公司

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,

0.00

RF switch HG137KA

RF switch

成都华光瑞芯微电子股份有限公司

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,

0.00

RF switch HG134KA-1

RF switch

成都华光瑞芯微电子股份有限公司

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,

0.00

RF switch HG133K-2/HG133K-2(M)

RF switch

成都华光瑞芯微电子股份有限公司

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,

0.00

RF switch HG127KD

RF switch

成都华光瑞芯微电子股份有限公司

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding,

0.00

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