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Switches

Switches Supplier：天津中科海高微波技术有限公司江苏润石科技有限公司南京畅敏科技有限公司深圳市大开实业发展有限公司东莞市三佐部品电子有限公司贵州网联传感科技有限公司合肥芯谷微电子有限公司东莞市讯普电子科技有限公司

Switches Related classification： Analog switch / Special switch / Load switch / Liquid Level Switches / Slide Switches / Keypad Switches / Pressure Switches / Reed Switches /

brief introduction： In electrical engineering, a switch is an electrical component that can break an electrical circuit, interrupting the current or diverting it from one conductor to another. The mechanism of a switch may be operated directly by a human operator to control a circuit,may be operated by a moving object such as a door-operated switch, or may be operated by some sensing element for pressure, temperature or flow. Switches are made to handle a wide range of voltages and currents; very large switches may

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Analog switch and multiplexer CBMG708ATS16 芯佰微电子（北京）有限公司 Microwave switch

CMOS, low voltage, single channel 8:1 multiplexer Detailed parameters...

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Analog switch and multiplexer CBMG719AST6 芯佰微电子（北京）有限公司 Microwave switch

1.8 V to 5.5 V, 2.5 Ω, 2:1 multiplex / SPDT Switch Detailed parameters...

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Analog switch and multiplexer CBMG719AMS8 芯佰微电子（北京）有限公司 Microwave switch

1.8 V to 5.5 V, 2.5 Ω, 2:1 multiplex / SPDT Switch Detailed parameters...

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RF switch HG166KB 成都华光瑞芯微电子股份有限公司 RF switch

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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RF switch HG146KB/HG146KB(M) 成都华光瑞芯微电子股份有限公司 RF switch

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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RF switch HG145KC-1 成都华光瑞芯微电子股份有限公司 RF switch

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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RF switch HG137KA 成都华光瑞芯微电子股份有限公司 RF switch

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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RF switch HG134KA-1 成都华光瑞芯微电子股份有限公司 RF switch

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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RF switch HG133K-2/HG133K-2(M) 成都华光瑞芯微电子股份有限公司 RF switch

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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RF switch HG127KD 成都华光瑞芯微电子股份有限公司 RF switch

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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