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MOSFETs

MOSFETs Supplier：上海光宇睿芯微电子有限公司深圳市龙泰通电子有限公司罗姆半导体（上海）有限公司

MOSFETs Related classification： Power supply socket / NOR Gates / XOR Gates / AND Gates / OR Gates / NOT Gates(Inverters) / NAND Gates / Power Management /

brief introduction： Introduction:The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals. The main advantage of a MOSFET over a regular transistor is that it requires very little current to turn on (less than 1mA), while delivering a much higher current to a load (10 to 50A or more). Metal oxide effect transistors (MOSFETs), are one of the most popular and common types of transistors found in modern electronics

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车载MOSFET R6004PND3FRA 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]4RDS(on)[O] VGS=Drive (Typ.)1.4 Detailed parameters...

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车载MOSFET R5205PND3FRA 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]525Drain Current ID [A]5RDS(on)[O] VGS=Drive (Typ.)1.3 Detailed parameters...

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190-800V功率MOSFET RCX700N20 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]200Drain Current ID [A]70RDS(on)[O] VGS=Drive (Typ.)0.028 Detailed parameters...

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190-800V功率MOSFET RCX511N25 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]250Drain Current ID [A]51RDS(on)[O] VGS=Drive (Typ.)0.048 Detailed parameters...

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190-800V功率MOSFET RCX450N20 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]200Drain Current ID [A]45RDS(on)[O] VGS=Drive (Typ.)0.042 Detailed parameters...

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190-800V功率MOSFET RCX330N25 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]250Drain Current ID [A]33RDS(on)[O] VGS=Drive (Typ.)0.077 Detailed parameters...

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190-800V功率MOSFET RCX300N20 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]200Drain Current ID [A]30RDS(on)[O] VGS=Drive (Typ.)0.06 Detailed parameters...

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190-800V功率MOSFET RCX220N25 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]250Drain Current ID [A]22RDS(on)[O] VGS=Drive (Typ.)0.105 Detailed parameters...

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190-800V功率MOSFET RCX200N20 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]200Drain Current ID [A]20RDS(on)[O] VGS=Drive (Typ.)0.1 Detailed parameters...

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190-800V功率MOSFET RCX160N20 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]200Drain Current ID [A]16RDS(on)[O] VGS=Drive (Typ.)0.135 Detailed parameters...

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