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Update time：2021-10-12 10:31
Index > Product > 成都华光瑞芯微电子股份有限公司 > Medium power amplifier chip > Medium power amplifier chip HG128F
Medium power amplifier chip HG128F

Medium power amplifier chip HG128F

成都华光瑞芯微电子股份有限公司 - Company profile Click Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended View details 》
  • HG128F
    encapsulation：HG128F
  • 413
    browsers：413
  • In production
    cycle：In production
  • 2021
    time：2021
  • 0.00
    Reference price： 0.00
by Jihzx.com

Medium power amplifier chip HG128F Manufacturer introduction

供应商名称：成都华光瑞芯微电子股份有限公司

成都华光瑞芯微电子股份有限公司是国内领先的微波射频芯片（MMIC）和模拟芯片研发生产商。凭借经验丰富的研发团队、卓越的技术实力和先进的生产工艺，已在微波射频领域处于业界领先水平。公司是中国半导体行业协会成员和四川省高新技术企业，并被工信部认定为集成电路设计企业，荣获“全国微电子技术产业知名品牌示范单位”称号。







公司主营产品为采用GaAs PHEMT/HBT、GaN HEMT、CMOS、SiGe BiCMOS工艺制作的微波射频芯片和模拟芯片，频率覆盖范围达DC-100GHz，具有频带宽、功耗低、集成度高、成本低、供货周期短等独特优势，已形成超宽带、低功耗系列等多种特色产品，同时可提供环行器隔离器和微波毫米波SIP组件。这些产品在无线通信、汽车电子、物联网等市场领域得到了广泛应用。公司现有微波射频芯片后道工艺和微组装生产线，万级净化间达2000m2，可分别对6-8英寸晶圆进行后道工序处理， 具备50万只的微波射频芯片和组件的年生产能力。







华光瑞芯将继续立足于自我创新的发展思路，持续研发性能优越、质量可靠、价格合理的微波射频产品，提供一流的技术服务，一如既往地坚持为客户提供更好的解决方案，创造更大价值。

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Medium power amplifier chip HG128FC
Medium power amplifier chip
HG128FC
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG128FD
Medium power amplifier chip
HG128FD
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG128F
Medium power amplifier chip
HG128F
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG128FB
Medium power amplifier chip
HG128FB
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG126F5
Medium power amplifier chip
HG126F5
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG126F6
Medium power amplifier chip
HG126F6
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG126FC
Medium power amplifier chip
HG126FC
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG126F7
Medium power amplifier chip
HG126F7
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG126FB
Medium power amplifier chip
HG126FB
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
Medium power amplifier chip HG126FA
Medium power amplifier chip
HG126FA
成都华光瑞芯微电子股份有限公司
Medium power amplifier chip
1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended
0.00
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