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广东友台半导体有限公司

Update time：2023-05-17 15:58

广东友台半导体有限公司 Product catalog： Low pressure differential linear voltage stabilization (LDO) Linear voltage regulator chip Field effect transistor (MOSFET) Rectifier bridge MCU monitoring chip DC-DC power chip OptoCoupler operational amplifier

广东友台半导体有限公司 Product Category： Low pressure differential line / Linear voltage regulator chip / Field effect transistor (MOSFE / Rectifier bridge / MCU monitoring chip / DC-DC power chip / OptoCoupler / operational amplifier /

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广东友台半导体有限公司 Supplier quotation

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MOS (Field Effect Transistor) SI2328A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID=5.8A(VGS=10V) RDS(ON)&lt;27mQ Detailed parameters...

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MOS (Field Effect Transistor) SI2319A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-40V ID=-4.4A(VGS=-10V) RDS(ON)&lt;70mQ Detailed parameters...

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MOS (Field Effect Transistor) SI2318A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=40V ID=5.6A(VGS=10V) RDS(ON)&lt;36mQ Detailed parameters...

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MOS (Field Effect Transistor) SI2312A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=20V ID=4.9A(VGS=4.5V) RDS(ON)= 27m Q Detailed parameters...

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MOS (Field Effect Transistor) SI2310A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=3A(VGS=±20V) RDS(ON)= 90m Q Detailed parameters...

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MOS (Field Effect Transistor) SI2309A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-60V ID=-1.25 A(VGS=-10V) RDS(ON)&lt;340mQ Detailed parameters...

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MOS (Field Effect Transistor) SI2308A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=2A(VGS=10V) RDS(ON)=160mQ Detailed parameters...

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MOS (Field Effect Transistor) SI2307A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID=-3.0A(VGS=±20V) RDS(ON)=50mQ Detailed parameters...

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MOS (Field Effect Transistor) SI2306A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID=4A(VGS=±20V) RDS(ON)=35mQ Detailed parameters...

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MOS (Field Effect Transistor) SI2305A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-20V ID=-4.2A(VGS=±12V) RDS(ON)=27mQ Detailed parameters...

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