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MOS (Field Effect Transistor) AO4435 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID=-12A(VGS =10V) RDS(ON)&lt; 20mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4423 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-13.5A(VGS=-10V) RDS(ON)=11mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4419 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-9.7A(VGS=-10V) RDS(ON)&lt; 20m Q Detailed parameters...

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MOS (Field Effect Transistor) AO4411 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-8A(VGS=±20V) RDS(ON)=21mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4410 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID =18A(VGS=10V) RDS(ON)&lt; 5.5m Q Detailed parameters...

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MOS (Field Effect Transistor) AO4409 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-15A(VGS=-10V) RDS(ON)&lt; 7.5m Q Detailed parameters...

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MOS (Field Effect Transistor) AO4407 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS =-30V |D=-14A(VGS=-1OV) RDS(ON)&lt; 11.5m。 Detailed parameters...

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MOS (Field Effect Transistor) AO4406 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS =30V ID=12A(VGS=10V) RDS(ON)&lt; 13mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4405 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS =-30V ID=-6A(VGS=10V) RDS(ON)&lt; 45mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4404B 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS =30V ID=8.5A(VGS=10V) RDS(ON)&lt; 20mQ Detailed parameters...

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