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Field effect transistor (MOSFET) AO3400 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 5.8A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 32 Ω @ 10V, 2.8A threshold voltage (Vgs (th) @ Id): 1.2V@250 μ A Detailed parameters...

Price： 0.13

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Field effect transistor (MOSFET) 9435 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 5.3A power (Pd): 2W conduction resistance (RDS (on) @ Vgs, Id): 57m Ω @ 10V, 5.3A threshold voltage (Vgs (th) @ Id): 3V@250uA Working temperature: -55 to+150 ℃ @ (Tj) Detailed parameters...

Price： 0.23

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Field effect transistor (MOSFET) 50N06 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 50A power (Pd): 225mW conduction resistance (RDS (on) @ Vgs, Id): 21m Ω @ 10V, 20A threshold voltage (Vgs (th) @ Id): 2.2V@250uA Working temperature: -55 To 150 ℃ @ (Tj) Detailed parameters...

Price： 0.35

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Field effect transistor (MOSFET) 4953 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: 2 P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 5.3A power (Pd): 2W conduction resistance (RDS (on) @ Vgs, Id): 54m Ω @ 10V, 5.3A Detailed parameters...

Price： 0.38

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Field effect transistor (MOSFET) 4410 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 15A power (Pd): 35W conduction resistance (RDS (on) @ Vgs, Id): 10m Ω @ 10V, 15A threshold voltage (Vgs (th) @ Id): 2.5V@250uA Working temperature: -55 to+150 ℃ @ (Tj) Detailed parameters...

Price： 0.35

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Field effect transistor (MOSFET) 4409 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 15A power (Pd): 3.1W conduction resistance (RDS (on) @ Vgs, Id): 12m Ω @ 10V, 15A threshold voltage (Vgs (th) @ Id): 3V@250uA Working temperature: -55 to+150 ℃ @ (Tj) Detailed parameters...

Price： 0.62

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Field effect transistor (MOSFET) 2SK3019 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 150mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 10mA Detailed parameters...

Price： 0.06

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Field effect transistor (MOSFET) 2SK3018 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 200mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 100mA threshold voltage (Vgs (th) @ Id): 1.5V@100uA Working temperature:+150 ℃ @ (Tj) Detailed parameters...

Price： 0.04

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Field effect transistor (MOSFET) 2N7002W 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 115mA power (Pd): 225mW conduction resistance (RDS (on) @ Vgs, Id): 7.5 Ω @ 10V, 500mA threshold voltage (Vgs (th) @ Id): 2.5V@250 μ A Detailed parameters...

Price： 0.08

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Field effect transistor (MOSFET) 2N7002 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 115mA power (Pd): 225mW conduction resistance (RDS (on) @ Vgs, Id): 2m Ω @ 10V, 100mA working temperature:+150 ℃ @ (Tj) Detailed parameters...

Price： 0.03

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