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Field effect transistor (MOSFET) 8205A 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3.7A power (Pd): 1.1W conduction resistance (RDS (on) @ Vgs, Id): 50m Ω @ 4.5V, 3.7A Detailed parameters...

Price： 0.13

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Field effect transistor (MOSFET) WPM2341-3 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3.7A power (Pd): 1.1W conduction resistance (RDS (on) @ Vgs, Id): 50m Ω @ 4.5V, 3.7A Detailed parameters...

Price： 0.17

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Field effect transistor (MOSFET) WNM4002-3/TR 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 150mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 10mA Detailed parameters...

Price： 0.11

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Field effect transistor (MOSFET) SI2343 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 4.1A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 80m Ω @ 10V, 4A threshold voltage (Vgs (th) @ Id): 2V@250uA Working temperature: 150 ℃ @ (Tj) Detailed parameters...

Price： 0.19

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Field effect transistor (MOSFET) SI2324 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 4.2A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 41m Ω @ 4.5V, 4.2A Detailed parameters...

Price： 0.21

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Field effect transistor (MOSFET) SI2306 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 3.5A power (Pd): 750mW conduction resistance (RDS (on) @ Vgs, Id): 40m Ω @ 10V, 3.5A Detailed parameters...

Price： 0.14

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Field effect transistor (MOSFET) SI2305 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 4A power (Pd): 1.1W conduction resistance (RDS (on) @ Vgs, Id): 65 Ω @ 4.5V, 3.2A threshold voltage (Vgs (th) @ Id): 1V@250 μ A Detailed parameters...

Price： 0.11

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Field effect transistor (MOSFET) SI2302 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 2.9A power (Pd): 1W conduction resistance (RDS (on) @ Vgs, Id): 45 Ω @ 4.5V, 2.9A threshold voltage (Vgs (th) @ Id): 1.2V@250 μ A Detailed parameters...

Price： 0.06

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Field effect transistor (MOSFET) SI2301 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3A power (Pd): 1W conduction resistance (RDS (on) @ Vgs, Id): 64m Ω @ 4.5V, 3A Detailed parameters...

Price： 0.06

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Field effect transistor (MOSFET) SI2301 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3A power (Pd): 1.25W conduction resistance (RDS (on) @ Vgs, Id): 66m Ω @ 4.5V, 2.8A Detailed parameters...

Price： 0.10

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