【transistor】_transistormanufactor_transistorpurchase-Integrating Chinese Chips

Field effect transistor (MOSFET) 2N7002T-7-F 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 115mA power (Pd): 150mW conduction resistance (RDS (on) @ Vgs, Id): 7.5 Ω @ 10V, 500mA Detailed parameters...

Price： 0.07

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Field effect transistor (MOSFET) IRLML2502TRPBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.15

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Field effect transistor (MOSFET) AO3415 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 5.6A power (Pd): 13000W conduction resistance (RDS (on) @ Vgs, Id): 42 Ω @ 4.5V, 5A threshold voltage (Vgs (th) @ Id): 1V@250uA Working temperature: -55-150 ℃ @ (Tj) Detailed parameters...

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Field effect transistor (MOSFET) 2SK3018W 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 200mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 10mA threshold voltage (Vgs (th) @ Id): 3V@100uA Working temperature: -55-150 ℃ @ (Tj) Detailed parameters...

Price： 0.05

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Field effect transistor (MOSFET) 2N7002K 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 300mA power (Pd): 225W conduction resistance (RDS (on) @ Vgs, Id): 2.8 Ω @ 10V, 500mA threshold voltage (Vgs (th) @ Id): 2.5V@250uA Working temperature:+150 ℃ @ (Tj) Detailed parameters...

Price： 0.04

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Field effect transistor (MOSFET) SI2310 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 5A power (Pd): 1.25W conduction resistance (RDS (on) @ Vgs, Id): 24m Ω @ 4.5V, 5A Detailed parameters...

Price： 0.12

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Field effect transistor (MOSFET) SI2302 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3A power (Pd): 1W conduction resistance (RDS (on) @ Vgs, Id): 45m Ω @ 4.5V, 3A Detailed parameters...

Price： 0.04

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Field effect transistor (MOSFET) SI2301 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 2.2A power (Pd): 700mW conduction resistance (RDS (on) @ Vgs, Id): 90m Ω @ 4.5V, 1.5A Detailed parameters...

Price： 0.04

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Field effect transistor (MOSFET) SI2300 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3A power (Pd): 400mW conduction resistance (RDS (on) @ Vgs, Id): 35m Ω @ 4.5V, 3.6A Detailed parameters...

Price： 0.11

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Field effect transistor (MOSFET) AO3401 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3A power (Pd): 400mW conduction resistance (RDS (on) @ Vgs, Id): 80m Ω @ 4.5V, 2.8A Detailed parameters...

Price： 0.11

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