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Transistor (BJT) 2SB1132 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: PNP collector breakdown voltage (Vceo): 32V collector current (Ic): 1A power (Pd): 500mW Detailed parameters...

Price： 0.08

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Transistor (BJT) 2SA812 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: PNP collector breakdown voltage (Vceo): 45V collector current (Ic): 100mA power (Pd): 200mW Detailed parameters...

Price： 0.08

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Transistor (BJT) 2SA812 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: PNP collector breakdown voltage (Vceo): 45V collector current (Ic): 100mA power (Pd): 200mW Detailed parameters...

Price： 0.03

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Transistor (BJT) 13001 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: NPN collector breakdown voltage (Vceo): 450V collector current (Ic): 200mA power (Pd): 625mW Detailed parameters...

Price： 0.09

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Field effect transistor (MOSFET) 15N10 深圳市永裕泰有限公司场效应管(MOSFET)

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 10A power (Pd): 15W conduction resistance (RDS (on) @ Vgs, Id): 131m Ω @ 10V, 10A threshold voltage (Vgs (th) @ Id): 2.5V@250uA Working temperature: -55 To 175 ℃ @ (Tj) Detailed parameters...

Price： 0.35

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Field effect transistor (MOSFET) QM2416K 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.13

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Field effect transistor (MOSFET) KM3139K 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 660mA power (Pd): 150mW conduction resistance (RDS (on) @ Vgs, Id): 510 Ω @ 4.5V, 550mA threshold voltage (Vgs (th) @ Id): 0.8V@250uA Working temperature: -55-150 ℃ @ (Tj) Detailed parameters...

Price： 0.06

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Field effect transistor (MOSFET) KM3134K 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 750mA power (Pd): 150mW conduction resistance (RDS (on) @ Vgs, Id): 330 Ω @ 4.5V, 650mA threshold voltage (Vgs (th) @ Id): 1.1V@250uA Working temperature: -55-150 ℃ @ (Tj) Detailed parameters...

Price： 0.06

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Field effect transistor (MOSFET) 2SK4003-7-F 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 200mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 10mA threshold voltage (Vgs (th) @ Id): 1.5V@100uA Working temperature: 150 ℃ @ (Tj) Detailed parameters...

Price： 0.11

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Field effect transistor (MOSFET) 2SK3018-7-F 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 200mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 10mA threshold voltage (Vgs (th) @ Id): 1.5V@100uA Working temperature: 150 ℃ @ (Tj) Detailed parameters...

Price： 0.05

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