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Field effect transistor (MOSFET) 1N60L 广东友台半导体有限公司 Field effect transistor (MOSFE

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Field effect transistor (MOSFET) 1N65G 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=1 A(VGS=±30V) RDS(ON)=8.5Q Detailed parameters...

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Field effect transistor (MOSFET) 1N60G 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=600V ID=1 A(VGS=±30V) RDS(ON)=11Q Detailed parameters...

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Digital transistor DTC143ZE 深圳市永裕泰有限公司 Digital transistor

Transistor type: NPN power (Pd): 150mW collector current (Ic): 100mA collector breakdown voltage (Vceo): 50V collector cutoff current (Icbo): 100nA Detailed parameters...

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Transistor (BJT) BC856B 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: PNP collector breakdown voltage (Vceo): 65V collector current (Ic): 100mA power (Pd): 200mW Detailed parameters...

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Transistor (BJT) SS8550 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: PNP collector breakdown voltage (Vceo): 25V collector current (Ic): 1.5A power (Pd): 200mW DC current gain（ hFE@Ic ,Vce)： 200@100mA , 1V H gear Detailed parameters...

Price： 0.08

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Transistor (BJT) SS8550 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: PNP collector breakdown voltage (Vceo): 25V collector current (Ic): 1.5A power (Pd): 625mW Detailed parameters...

Price： 0.03

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Transistor (BJT) SS8050 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: NPN collector breakdown voltage (Vceo): 25V collector current (Ic): 1.5A power (Pd): 250mW DC current gain（ hFE@Ic ,Vce)： 200@100mA , 1V H-range 200-350 Detailed parameters...

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Transistor (BJT) SS8050 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: NPN collector breakdown voltage (Vceo): 25V collector current (Ic): 1.5A power (Pd): 625mW DC current gain（ hFE@Ic ,Vce)： 200@100mA ,1V 200-400 Detailed parameters...

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Transistor (BJT) S9018 深圳市永裕泰有限公司 Transistor (BJT)

Transistor type: NPN collector breakdown voltage (Vceo): 15V collector current (Ic): 50mA power (Pd): 200mW Detailed parameters...

Price： 0.04

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