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Field effect transistor (MOSFET) 7N65F 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=7A(VGS=±30V) RDS(ON)=1.1Q Detailed parameters...

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Field effect transistor (MOSFET) 5N65F 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=5A(VGS=±30V) RDS(ON)=1.5Q Detailed parameters...

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Field effect transistor (MOSFET) 4N65F 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=4A(VGS=±30V)RDS(ON)=2.8Q Detailed parameters...

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Field effect transistor (MOSFET) 4N35 广东友台半导体有限公司 Field effect transistor (MOSFE

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Field effect transistor (MOSFET) 4N25 广东友台半导体有限公司 Field effect transistor (MOSFE

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Field effect transistor (MOSFET) 2N65L 广东友台半导体有限公司 Field effect transistor (MOSFE

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Field effect transistor (MOSFET) 2N60L 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=600V ID=2A(VGS=±30V) RDS(ON)=4.2Q Detailed parameters...

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Field effect transistor (MOSFET) 2N65G 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=2A(VGS=±30V) RDS(ON)=4.5Q Detailed parameters...

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Field effect transistor (MOSFET) 2N60G 广东友台半导体有限公司 Field effect transistor (MOSFE

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Field effect transistor (MOSFET) 1N65L 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=1 A(VGS=±30V) RDS(ON)=8.5Q Detailed parameters...

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