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MOS (Field Effect Transistor) AO3442A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=100V ID=1 A(VGS=±20V) RDS(ON)= 630m Q Detailed parameters...

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MOS (Field Effect Transistor) AO3423A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channe VDS=-20V ID=-2A(VGS=±12) RDS(ON)=59mQ Detailed parameters...

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MOS (Field Effect Transistor) AO3422A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=2.1A(VGS =±20V) RDS(ON)= 80m Q Detailed parameters...

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