【power amplifier】_power amplifiermanufactor_power amplifierpurchase-Integrating Chinese Chips

View Album

GaAs power amplifier chip MH321 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 6-18 input / output return loss (DB) - 10 Detailed parameters...

Price： 1.00

View details

View Album

GaAs power amplifier chip MH300 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 6-18 input / output return loss (DB) - 17 Detailed parameters...

Price： 1.00

View details

View Album

GaAs power amplifier chip MH308 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 5-12 input / output return loss (DB) - 18 Detailed parameters...

Price： 1.00

View details

View Album

GaAs power amplifier chip MH363 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 3.4-8.5 input / output return loss (DB) - 15 Detailed parameters...

Price： 1.00

View details

View Album

GaAs power amplifier chip MH357 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 2-6 input / output return loss (DB) - 12 Detailed parameters...

Price： 1.00

View details

View Album

GaAs power amplifier chip MH362 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 0.05-8 input / output return loss (DB) - 16 Detailed parameters...

Price： 1.00

View details

View Album

GaAs power amplifier chip MH315 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) DC-2 input / output return loss (DB) - 20 Detailed parameters...

Price： 1.00

View details

View Album

Power amplifier chip HG138F8 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00

View details

View Album

Power amplifier chip HG138F7 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00

View details

View Album

Power amplifier chip HG138F-4 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00

View details

power amplifier Supplier quotation