【ic】_icmanufactor_icpurchase-Integrating Chinese Chips

Reverse cutoff voltage (Vdrm): 275V reverse leakage current (Idrm): 5 μ A switch voltage (Vs): 350V maintenance current (IH): 50mA on state voltage (Vt): 4V on state current (It): 2.2A peak pulse current - Ipp (10/1000us): 100A off state capacitance (Co): 30pF Detailed parameters...

Price： 0.21

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Semiconductor discharge tube (TSS) P0080SB 深圳市永裕泰有限公司半导体放电管(TSS)

Reverse cutoff voltage (Vdrm): 6V reverse leakage current (Idrm): 5 μ A switch voltage (Vs): 25V maintenance current (IH): 50mA on state voltage (Vt): 4V on state current (It): 2.2A peak pulse current - Ipp (10/1000us): 80A off state capacitance (Co): 100pF Detailed parameters...

Price： 0.14

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Electrostatic discharge (ESD) protective devices SM05C 深圳市永裕泰有限公司 Electrostatic discharge (ESD)

Reverse cutoff voltage (Vrwm): 5V breakdown voltage (minimum): 6V peak pulse current (Ipp) @ tp=8/20 μ s: 17A maximum clamping voltage: 18V Detailed parameters...

Price： 0.18

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Electrostatic discharge (ESD) protective devices SM03 深圳市永裕泰有限公司 Electrostatic discharge (ESD)

Reverse cutoff voltage (Vrwm): 3.3V breakdown voltage (minimum): 4V peak pulse current (Ipp) @ tp=8/20 μ s: 20A maximum clamping voltage: 14V Detailed parameters...

Price： 0.09

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Electrostatic discharge (ESD) protective devices PE05VP05N-16 深圳市永裕泰有限公司 Electrostatic discharge (ESD)

Reverse cutoff voltage (Vrwm): 5V Maximum clamping voltage: 40V Detailed parameters...

Price： 0.09

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