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Medium power amplifier chip HG126F7 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG126FB 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG126FA 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG125F-1 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG125F7 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG125F3 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG125F5 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG125F4 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG125F 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Medium power amplifier chip HG124F7 成都华光瑞芯微电子股份有限公司 Medium power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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