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Passive chip, power divider HG128GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG127GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG127G 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG126GC 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG126GB 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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