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GaAs Power Divider chip MH049 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 1-20 function description 0 ° 1 minute 2 Detailed parameters...

Price： 1.00

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GaAs Power Divider chip MH033 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 0.5-2 function description 0 ° 1 minute 2 Detailed parameters...

Price： 1.00

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GaAs Power Divider chip MH051 成都浩瀚芯光微电子科技有限公司 low noise amplifier

Operating frequency (GHz) 0.07-0.15 function description 0 ° 1 minute 2 Detailed parameters...

Price： 1.00

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Passive chip, power divider HG128GC 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG146G1 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG146GC 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG146GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG136GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG134GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG128GB 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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