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Field effect transistor (MOSFET) SI2301 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3A power (Pd): 1.25W conduction resistance (RDS (on) @ Vgs, Id): 66m Ω @ 4.5V, 2.8A Detailed parameters...

Price： 0.10

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Field effect transistor (MOSFET) SI2300 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.11

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Field effect transistor (MOSFET) NDS331N 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.18

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Field effect transistor (MOSFET) IRLML6402TRPBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 3.7A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 50m Ω @ 4.5V, 3.7A Detailed parameters...

Price： 0.15

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Field effect transistor (MOSFET) IRLML6401TRPBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 12V continuous drain current (Id): 4.3A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 50m Ω @ 4.5V, 4.3A Detailed parameters...

Price： 0.15

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Field effect transistor (MOSFET) IRLML6244TRPBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.15

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Field effect transistor (MOSFET) IRLML5203TRPBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 3A power (Pd): 1.25W conduction resistance (RDS (on) @ Vgs, Id): 98 Ω @ 10V, 3A threshold voltage (Vgs (th) @ Id): 2.5V@250 μ A Detailed parameters...

Price： 0.16

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Field effect transistor (MOSFET) IRLML5203 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 3A power (Pd): 1.25W conduction resistance (RDS (on) @ Vgs, Id): 98m Ω @ 10V, 3A Detailed parameters...

Price： 0.14

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Field effect transistor (MOSFET) IRFR9024NTRTBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 60V continuous drain current (Id): 8.8A power (Pd): 50W conduction resistance (RDS (on) @ Vgs, Id): 75m Ω @ 10V, 5.3A Detailed parameters...

Price： 0.92

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Field effect transistor (MOSFET) IRFML8244TRPBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 22V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.25

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