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Field effect transistor (MOSFET) 2N60G 广东友台半导体有限公司 Field effect transistor (MOSFE

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Field effect transistor (MOSFET) 1N65L 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=1 A(VGS=±30V) RDS(ON)=8.5Q Detailed parameters...

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Field effect transistor (MOSFET) 1N60L 广东友台半导体有限公司 Field effect transistor (MOSFE

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Field effect transistor (MOSFET) 1N65G 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=650V ID=1 A(VGS=±30V) RDS(ON)=8.5Q Detailed parameters...

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Field effect transistor (MOSFET) 1N60G 广东友台半导体有限公司 Field effect transistor (MOSFE

N-Channel VDS=600V ID=1 A(VGS=±30V) RDS(ON)=11Q Detailed parameters...

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Field effect transistor (MOSFET) 15N10 深圳市永裕泰有限公司场效应管(MOSFET)

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 10A power (Pd): 15W conduction resistance (RDS (on) @ Vgs, Id): 131m Ω @ 10V, 10A threshold voltage (Vgs (th) @ Id): 2.5V@250uA Working temperature: -55 To 175 ℃ @ (Tj) Detailed parameters...

Price： 0.35
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Field effect transistor (MOSFET) QM2416K 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.13
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Field effect transistor (MOSFET) KM3139K 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 20V continuous drain current (Id): 660mA power (Pd): 150mW conduction resistance (RDS (on) @ Vgs, Id): 510 Ω @ 4.5V, 550mA threshold voltage (Vgs (th) @ Id): 0.8V@250uA Working temperature: -55-150 ℃ @ (Tj) Detailed parameters...

Price： 0.06
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Field effect transistor (MOSFET) KM3134K 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 750mA power (Pd): 150mW conduction resistance (RDS (on) @ Vgs, Id): 330 Ω @ 4.5V, 650mA threshold voltage (Vgs (th) @ Id): 1.1V@250uA Working temperature: -55-150 ℃ @ (Tj) Detailed parameters...

Price： 0.06
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Field effect transistor (MOSFET) 2SK4003-7-F 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 200mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 10mA threshold voltage (Vgs (th) @ Id): 1.5V@100uA Working temperature: 150 ℃ @ (Tj) Detailed parameters...

Price： 0.11
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