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MOS (Field Effect Transistor) AO4407 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS =-30V |D=-14A(VGS=-1OV) RDS(ON)&lt; 11.5m。 Detailed parameters...

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MOS (Field Effect Transistor) AO4406 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS =30V ID=12A(VGS=10V) RDS(ON)&lt; 13mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4405 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS =-30V ID=-6A(VGS=10V) RDS(ON)&lt; 45mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4404B 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS =30V ID=8.5A(VGS=10V) RDS(ON)&lt; 20mQ Detailed parameters...

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MOS (Field Effect Transistor) AO3442A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=100V ID=1 A(VGS=±20V) RDS(ON)= 630m Q Detailed parameters...

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MOS (Field Effect Transistor) AO3423A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channe VDS=-20V ID=-2A(VGS=±12) RDS(ON)=59mQ Detailed parameters...

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MOS (Field Effect Transistor) AO3422A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=2.1A(VGS =±20V) RDS(ON)= 80m Q Detailed parameters...

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MOS (Field Effect Transistor) AO3416A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=20V ID=6A(VGS=4.5V) RDS(ON)= 21mQ Detailed parameters...

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MOS (Field Effect Transistor) AO3415A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channe VDS=-20V ID=-4A(VGS=±8 V) RDS(ON)=31mQ Detailed parameters...

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MOS (Field Effect Transistor) AO3414A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=20V ID=4.2A(VGS=4.5V) RDS(ON)=22m Q Detailed parameters...

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