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MOS (Field Effect Transistor) AO4480 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=40V ID=14A (VGS=10V) RDS(ON)&lt; 12mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4466 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID=10A RDS(ON)=16.7mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4459 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID=—6.5A(VGS=10V) RDS(ON)&lt; 42mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4443 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-40V ID=-8A(VGS =10V) RDS(ON) &lt; 37m Q Detailed parameters...

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MOS (Field Effect Transistor) AO4435 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID=-12A(VGS =10V) RDS(ON)&lt; 20mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4423 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-13.5A(VGS=-10V) RDS(ON)=11mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4419 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-9.7A(VGS=-10V) RDS(ON)&lt; 20m Q Detailed parameters...

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MOS (Field Effect Transistor) AO4411 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-8A(VGS=±20V) RDS(ON)=21mQ Detailed parameters...

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MOS (Field Effect Transistor) AO4410 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID =18A(VGS=10V) RDS(ON)&lt; 5.5m Q Detailed parameters...

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MOS (Field Effect Transistor) AO4409 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID =-15A(VGS=-10V) RDS(ON)&lt; 7.5m Q Detailed parameters...

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