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Field effect transistor (MOSFET) 2SK3018 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 100mA power (Pd): 200mW conduction resistance (RDS (on) @ Vgs, Id): 8 Ω @ 4V, 100mA threshold voltage (Vgs (th) @ Id): 1.5V@100uA Working temperature:+150 ℃ @ (Tj) Detailed parameters...

Price： 0.04
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Field effect transistor (MOSFET) 2N7002W 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 115mA power (Pd): 225mW conduction resistance (RDS (on) @ Vgs, Id): 7.5 Ω @ 10V, 500mA threshold voltage (Vgs (th) @ Id): 2.5V@250 μ A Detailed parameters...

Price： 0.08
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Field effect transistor (MOSFET) 2N7002 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 60V continuous drain current (Id): 115mA power (Pd): 225mW conduction resistance (RDS (on) @ Vgs, Id): 2m Ω @ 10V, 100mA working temperature:+150 ℃ @ (Tj) Detailed parameters...

Price： 0.03
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Field effect transistor KSC5302DM 汕头华汕电子器件有限公司 Crystals

集电极—基极击穿电压IC=1mA, IE=0 Detailed parameters...

Price： 1.00
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Field effect transistor KSC5302D 汕头华汕电子器件有限公司 Crystals

集电极—基极击穿电压IC=1mA, IE=0 Detailed parameters...

Price： 1.00
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Field effect transistor KSE13009 汕头华汕电子器件有限公司 Crystals

集电极—基极击穿电压IC=1mA, IE=0 Detailed parameters...

Price： 1.00
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Field effect transistor FJA13009 汕头华汕电子器件有限公司 Crystals

集电极—基极击穿电压IC=1mA, IE=0 Detailed parameters...

Price： 1.00
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Field effect transistor KSE13009F 汕头华汕电子器件有限公司 Crystals

集电极—基极击穿电压IC=1mA, IE=0 Detailed parameters...

Price： 1.00
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Field effect transistor KSE13009 汕头华汕电子器件有限公司 Crystals

集电极—基极击穿电压IC=1mA, IE=0 Detailed parameters...

Price： 1.00
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Field effect transistor KSE13007 汕头华汕电子器件有限公司 Crystals

集电极—基极击穿电压IC=1mA, IE=0 Detailed parameters...

Price： 1.00
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