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Field effect transistor (MOSFET) IRFR9024NTRTBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 60V continuous drain current (Id): 8.8A power (Pd): 50W conduction resistance (RDS (on) @ Vgs, Id): 75m Ω @ 10V, 5.3A Detailed parameters...

Price： 0.92

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Field effect transistor (MOSFET) IRFML8244TRPBF 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 22V continuous drain current (Id): 6A conduction resistance (RDS (on) @ Vgs, Id): 22m Ω @ 4.5V, 6A Detailed parameters...

Price： 0.25

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Field effect transistor (MOSFET) FDN360P 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 2A power (Pd): 1.2W conduction resistance (RDS (on) @ Vgs, Id): 95m Ω @ 4.5V, 1.5A Detailed parameters...

Price： 0.15

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Field effect transistor (MOSFET) DMP3099L-7 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 4.1A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 48m Ω @ 10V, 4A Detailed parameters...

Price： 0.24

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Field effect transistor (MOSFET) BSS84 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 50V continuous drain current (Id): 130mA power (Pd): 200mW conduction resistance (RDS (on) @ Vgs, Id): 10 Ω @ 5V, 100mA Detailed parameters...

Price： 0.05

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Field effect transistor (MOSFET) BSS138 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 50V continuous drain current (Id): 220mA power (Pd): 225mW conduction resistance (RDS (on) @ Vgs, Id): 3.5 Ω @ 10V, 220mA Detailed parameters...

Price： 0.04

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Field effect transistor (MOSFET) BSS123 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 100V continuous drain current (Id): 150mA power (Pd): 250mW conduction resistance (RDS (on) @ Vgs, Id): 6 Ω @ 10V, 120mA Detailed parameters...

Price： 0.05

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Field effect transistor (MOSFET) AO3414 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 20V continuous drain current (Id): 4.2A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 50m Ω @ 4.5V, 4.2A threshold voltage (Vgs (th) @ Id): 1.4V@250uA Working temperature: -55 to+150 ℃ @ (Tj) Detailed parameters...

Price： 0.11

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Field effect transistor (MOSFET) AO3407 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: P-channel drain source voltage (Vdss): 30V continuous drain current (Id): 4.1A power (Pd): 1.4W conduction resistance (RDS (on) @ Vgs, Id): 48m Ω @ 10V, 4A Detailed parameters...

Price： 0.11

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Field effect transistor (MOSFET) AO3406 深圳市永裕泰有限公司 Field effect transistor (MOSFE

Type: N-channel drain source voltage (Vdss): 30V continuous drain current (Id): 3.5A power (Pd): 750mW conduction resistance (RDS (on) @ Vgs, Id): 40m Ω @ 10V, 3.5A Detailed parameters...

Price： 0.21

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