【Field effect transistor】_Field effect transistormanufactor_Field effect transistorpurchase-Integrating Chinese Chips

集合中芯网jihzxIC-电子元器件查询,电子元器件搜索引擎

Category List Product List

English

Index > Product List > Field effect transistor

Field effect transistor Supplier quotation

View Album

MOS (Field Effect Transistor) STD30NF06L 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=30A (VGS=10V) RDS(ON)= 23m Q Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) STD20NF06L 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=30A (VGS=±20V) RDS(ON)= 25m Q Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) STD15NF10L 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=100V ID=20A(VGS=10V) RDS(ON)&lt; 75mQ Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) STD10NF10L 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=100V ID=15A(VGS=10V) RDS(ON)=95mQ Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) SI2333CDS 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS = -12V ID=-7.1A(VGS =-4.5V) RDS(ON)=28.5mQ Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) SI2328A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID=5.8A(VGS=10V) RDS(ON)&lt;27mQ Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) SI2319A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-40V ID=-4.4A(VGS=-10V) RDS(ON)&lt;70mQ Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) SI2318A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=40V ID=5.6A(VGS=10V) RDS(ON)&lt;36mQ Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) SI2312A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=20V ID=4.9A(VGS=4.5V) RDS(ON)= 27m Q Detailed parameters...

Price： 0.00
View details
View Album

MOS (Field Effect Transistor) SI2310A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=3A(VGS=±20V) RDS(ON)= 90m Q Detailed parameters...

Price： 0.00
View details

Tool

Scan code wechat

Scan code official account