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MOS (Field Effect Transistor) IRLML5203 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID=-3A(VGS=-10V) RDS(ON)=85mQ Detailed parameters...

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MOS (Field Effect Transistor) LML2502 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=20V ID=4.2A(VGS=4.5V) RDS(ON)=45mQ Detailed parameters...

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MOS (Field Effect Transistor) IRLML2246 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-20V ID=-2A(VGS=-4.5V) RDS(ON) vi35mQ Detailed parameters...

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MOS (Field Effect Transistor) LML2060TR 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=4.8A(VGS=10V) RDS(ON)&lt;85mQ Detailed parameters...

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MOS (Field Effect Transistor) LML2030TR 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID=2.7A(VGS=10V) RDS(ON)vi00mQ Detailed parameters...

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MOS (Field Effect Transistor) CEM9926A 广东友台半导体有限公司 MOS (Field Effect Transistor)

Dual N-Channel VDS=20V ID=7A(VGS =±8V) RDS(ON)=21.6mQ Detailed parameters...

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MOS (Field Effect Transistor) STN4438 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=8.2A(VGS=±20V) RDS(ON)= 35mQ Detailed parameters...

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MOS (Field Effect Transistor) STP4925A 广东友台半导体有限公司 MOS (Field Effect Transistor)

P+P-Channel VDS=-30V ID=-50A(VGS=±20V) RDS(ON)=13mQ Detailed parameters...

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MOS (Field Effect Transistor) SVT078R0ND 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=68V ID=88A (VGS=±20V) RDS(ON)= 63m Q Detailed parameters...

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MOS (Field Effect Transistor) STD35NF06L 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=60V ID=35A (VGS=10V) RDS(ON)= 20m Q Detailed parameters...

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