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MOS (Field Effect Transistor) NDC7002N 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channe VDS=50V ID=0.51 A(VGS=20V) RDS(ON)=1 Q Detailed parameters...

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MOS (Field Effect Transistor) 8205A 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channe VDS=20V ID=5A (VGS=±12 V) RDS(ON)=22mQ Detailed parameters...

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MOS (Field Effect Transistor) BSS308PE 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID=-2A(VGS=-10V) RDS(ON)&lt;80mQ Detailed parameters...

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MOS (Field Effect Transistor) BSS138 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channe VDS=50V ID=300mA(VGS=±20V) RDS(ON)=2.5Q Detailed parameters...

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MOS (Field Effect Transistor) BSS84 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-50V ID=0.13A(VGS=±20V) RDS(ON)=10Q Detailed parameters...

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MOS (Field Effect Transistor) LML9301TR 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-30V ID=-3.6A (VGS=-10V) RDS(ON)&lt;64mQ Detailed parameters...

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MOS (Field Effect Transistor) IRLML6402 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-20V ID=-3.7A (VGS=±12V) RDS(ON)=50mQ Detailed parameters...

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MOS (Field Effect Transistor) IRLML6401 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-12V ID=-4.3A (VGS=±8V) RDS(ON)=50mQ Detailed parameters...

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MOS (Field Effect Transistor) LML6346TR 广东友台半导体有限公司 MOS (Field Effect Transistor)

N-Channel VDS=30V ID=3.4A (VGS=4.5V) RDS(ON)&lt;63mQ Detailed parameters...

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MOS (Field Effect Transistor) IRLML6302 广东友台半导体有限公司 MOS (Field Effect Transistor)

P-Channel VDS=-20V ID=-4.9A(VGS=-4.5V) RDS(ON)&lt;90mQ Detailed parameters...

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