【Bidirectional amplifier chip】_Bidirectional amplifier chipmanufactor_Bidirectional amplifier chippurchase-Integrating Chinese Chips

View Album

GaAs bidirectional amplifier chip HMF016 成都浩瀚芯光微电子科技有限公司 Thermistors

Operating frequency (GHz) 21-23 gain (DB) 21 Detailed parameters...

Price： 1.00

View details

View Album

GaAs bidirectional amplifier chip HMF017 成都浩瀚芯光微电子科技有限公司 Thermistors

Operating frequency (GHz) 14-17 gain (DB) 25 Detailed parameters...

Price： 1.00

View details

View Album

GaAs bidirectional amplifier chip HMF024 成都浩瀚芯光微电子科技有限公司 Chip SMD Resistors

Operating frequency (GHz) 8-18 gain (DB) 11 Detailed parameters...

Price： 1.00

View details

View Album

GaAs bidirectional amplifier chip HMF028 成都浩瀚芯光微电子科技有限公司 Thermistors

Operating frequency (GHz) 0.8-4 gain (DB) 18 Detailed parameters...

Price： 1.00

View details

View Album

Bidirectional amplifier chip HG117FJ 成都华光瑞芯微电子股份有限公司 Bidirectional amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00

View details

View Album

Bidirectional amplifier chip HG113F1 成都华光瑞芯微电子股份有限公司 Bidirectional amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00

View details

View Album

Bidirectional amplifier chip HG142F2 成都华光瑞芯微电子股份有限公司 Bidirectional amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00

View details

Bidirectional amplifier chip Supplier quotation