Index > Category List > Power amplifier chip

Power amplifier chip

Power amplifier chip Supplier：成都华光瑞芯微电子股份有限公司

Power amplifier chip Related classification： Amplifier chip / Gain Block amplifier chip / Medium power amplifier chip / Low noise amplifier chip / Bidirectional amplifier chip / Drive amplifier class chip / Frequency conversion class chi / Precision Operational Amplifie /

brief introduction： The final power amplifier plays a key role. It will drive the amplifier sent the current signal to form a high-power signal, driven loudspeaker sound, its technical index decided the technical index of the whole power amplifier...

Power amplifier chip Supplier quotation

View Album

Power amplifier chip HG135F7 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG135F6 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG135F8 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG135F6A 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG134FB 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG135F6 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG134FC 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG134F2A 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG134F3A 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG134F3 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details