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Low noise amplifier chip

Low noise amplifier chip Supplier：天津中科海高微波技术有限公司成都华光瑞芯微电子股份有限公司芯佰微电子（北京）有限公司成都通量科技有限公司

Low noise amplifier chip Related classification： Amplifier chip / Gain Block amplifier chip / Medium power amplifier chip / Power amplifier chip / Bidirectional amplifier chip / Drive amplifier class chip / Frequency conversion class chi / Precision Operational Amplifie /

brief introduction： Low noise amplifier, a very low noise factor amplifier. Generally used as high frequency or medium frequency preamplifier of various radio receivers, as well as high sensitivity electronic detection equipment amplifier circuit. In the case of amplifying the weak signal, the noise of the amplifier itself may interfere the signal very seriously, so it is hoped that the noise can be reduced to improve the signal-to-noise ratio.

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Low noise amplifier chip HG111FG-1 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG113F5-PQ2A 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG111F3 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG111F2 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG111F1 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG114FH-2 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG114FH-3 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG114FH-1A 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG114F2 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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Low noise amplifier chip HG114FH-1 成都华光瑞芯微电子股份有限公司 Low noise amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

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