Index > Category List > Amplifier chip

Amplifier chip

Amplifier chip Supplier：广东友台半导体有限公司天津中科海高微波技术有限公司江苏润石科技有限公司成都华光瑞芯微电子股份有限公司芯佰微电子（北京）有限公司广东华冠半导体有限公司成都通量科技有限公司

Amplifier chip Related classification： Gain Block amplifier chip / Medium power amplifier chip / Power amplifier chip / Low noise amplifier chip / Bidirectional amplifier chip / Drive amplifier class chip / Frequency conversion class chi / Precision Operational Amplifie /

brief introduction： The final power amplifier plays a key role. It will drive the amplifier sent the current signal to form a high-power signal, driven loudspeaker sound, its technical index decided the technical index of the whole power amplifier...

Amplifier chip Supplier quotation

View Album

Precision Operational Amplifier CBM8601AST5 芯佰微电子（北京）有限公司 Precision Operational Amplifie

With very low offset voltage, RRIO, single channel operational amplifier Detailed parameters...

Price： 0.00
View details
View Album

Bidirectional amplifier chip HG117FJ 成都华光瑞芯微电子股份有限公司 Bidirectional amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Bidirectional amplifier chip HG113F1 成都华光瑞芯微电子股份有限公司 Bidirectional amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Bidirectional amplifier chip HG142F2 成都华光瑞芯微电子股份有限公司 Bidirectional amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG138F8 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG138F7 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG138F-4 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG138FB 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG138FA 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details
View Album

Power amplifier chip HG137FC 成都华光瑞芯微电子股份有限公司 Power amplifier chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment;2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it;3. Conductive adhesive or alloy sintering for chip (when the alloy temperature cannot exceed 300 ℃)The interval shall not exceed 30 seconds) to make it fully grounded;4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ mDouble gold wire bonding, the recommended Detailed parameters...

Price： 0.00
View details