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Power divider chip

Power divider chip Supplier：成都华光瑞芯微电子股份有限公司成都恒利泰科技有限公司成都通量科技有限公司

Power divider chip Related classification： Power supply socket / NOR Gates / XOR Gates / AND Gates / OR Gates / NOT Gates(Inverters) / NAND Gates / Power Management /

brief introduction：

Power divider chip Supplier quotation

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Power divider products HT-ADP-2-1W 成都恒利泰科技有限公司 Power divider chip

对标美国 MINI 型号ADP-2-1W Detailed parameters...

Price： 1.00
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Power divider products HT-ADP-2-1+ 成都恒利泰科技有限公司 Power divider chip

对标美国 MINI 型号ADP-2-1+ Detailed parameters...

Price： 1.00
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Passive chip, power divider HG128GC 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG146G1 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG146GC 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG146GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG136GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG134GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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Passive chip, power divider HG128GB 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

Price： 0.00
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Passive chip, power divider HG128GA 成都华光瑞芯微电子股份有限公司 Power divider chip

1. The chip is stored in dry and nitrogen environment and used in ultra clean environment; 2. GaAs material is brittle and cannot touch the chip surface. Care must be taken when using it; 3. The chip shall be sintered with conductive adhesive or alloy (the alloy temperature shall not exceed 300 ℃, and the time shall not exceed 30 seconds) to make it fully grounded; 4. The gap between the chip microwave port and the substrate shall not exceed 0.05mm Ф twenty-five μ M double gold wire bonding, Detailed parameters...

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