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MOSFETs

MOSFETs Supplier：上海光宇睿芯微电子有限公司深圳市龙泰通电子有限公司罗姆半导体（上海）有限公司

MOSFETs Related classification： Power supply socket / NOR Gates / XOR Gates / AND Gates / OR Gates / NOT Gates(Inverters) / NAND Gates / Power Management /

brief introduction： Introduction:The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals. The main advantage of a MOSFET over a regular transistor is that it requires very little current to turn on (less than 1mA), while delivering a much higher current to a load (10 to 50A or more). Metal oxide effect transistors (MOSFETs), are one of the most popular and common types of transistors found in modern electronics

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silicon carbide S4007 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]80 Detailed parameters...

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silicon carbide S4008 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]60 Detailed parameters...

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silicon carbide S4101 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]40 Detailed parameters...

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silicon carbide S4102 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]30 Detailed parameters...

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silicon carbide S4103 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]22 Detailed parameters...

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silicon carbide S4107 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]105 Detailed parameters...

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silicon carbide S4108 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]80 Detailed parameters...

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车载MOSFET SP8M6HZG 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]30Drain Current ID [A]5RDS(on)[O] VGS=Drive (Typ.)0.058 Detailed parameters...

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车载MOSFET SP8M51HZG 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]100Drain Current ID [A]3RDS(on)[O] VGS=Drive (Typ.)0.135 Detailed parameters...

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车载MOSFET SP8M4HZG 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]30Drain Current ID [A]9RDS(on)[O] VGS=Drive (Typ.)0.017 Detailed parameters...

Price： 1.00
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