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MOSFETs

MOSFETs Supplier：上海光宇睿芯微电子有限公司深圳市龙泰通电子有限公司罗姆半导体（上海）有限公司

MOSFETs Related classification： Power supply socket / NOR Gates / XOR Gates / AND Gates / OR Gates / NOT Gates(Inverters) / NAND Gates / Power Management /

brief introduction： Introduction:The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals. The main advantage of a MOSFET over a regular transistor is that it requires very little current to turn on (less than 1mA), while delivering a much higher current to a load (10 to 50A or more). Metal oxide effect transistors (MOSFETs), are one of the most popular and common types of transistors found in modern electronics

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190-800V功率MOSFET R6507KNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]650Drain Current ID [A]7RDS(on)[O] VGS=Drive (Typ.)0.605 Detailed parameters...

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190-800V功率MOSFET R6507ENJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]650Drain Current ID [A]7RDS(on)[O] VGS=Drive (Typ.)0.605 Detailed parameters...

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190-800V功率MOSFET R6504KNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]650Drain Current ID [A]4RDS(on)[O] VGS=Drive (Typ.)0.955 Detailed parameters...

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190-800V功率MOSFET R6504ENJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]650Drain Current ID [A]4RDS(on)[O] VGS=Drive (Typ.)0.955 Detailed parameters...

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190-800V功率MOSFET R6024KNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]24RDS(on)[O] VGS=Drive (Typ.)0.15 Detailed parameters...

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190-800V功率MOSFET R6024ENJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]24RDS(on)[O] VGS=Drive (Typ.)0.15 Detailed parameters...

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190-800V功率MOSFET R6020KNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]20RDS(on)[O] VGS=Drive (Typ.)0.17 Detailed parameters...

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190-800V功率MOSFET R6020JNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]20RDS(on)[O] VGS=Drive (Typ.)0.18 Detailed parameters...

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190-800V功率MOSFET R6020ENJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]20RDS(on)[O] VGS=Drive (Typ.)0.17 Detailed parameters...

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190-800V功率MOSFET R6018JNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]18RDS(on)[O] VGS=Drive (Typ.)0.22 Detailed parameters...

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