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Zener diode

Zener diode Supplier：深圳市永裕泰有限公司深圳市晶扬电子有限公司上海光宇睿芯微电子有限公司深圳市龙泰通电子有限公司芯佰微电子（北京）有限公司罗姆半导体（上海）有限公司

Zener diode Related classification： Power supply socket / NOR Gates / XOR Gates / AND Gates / OR Gates / NOT Gates(Inverters) / NAND Gates / Power Management /

brief introduction： Introduction:A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor&apos;s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

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190-800V功率MOSFET R6011KNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]11RDS(on)[O] VGS=Drive (Typ.)0.34 Detailed parameters...

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190-800V功率MOSFET R6011ENJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]11RDS(on)[O] VGS=Drive (Typ.)0.34 Detailed parameters...

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190-800V功率MOSFET R6009KNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]9RDS(on)[O] VGS=Drive (Typ.)0.5 Detailed parameters...

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190-800V功率MOSFET R6009JNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]9RDS(on)[O] VGS=Drive (Typ.)0.45 Detailed parameters...

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190-800V功率MOSFET R6009ENJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]9RDS(on)[O] VGS=Drive (Typ.)0.5 Detailed parameters...

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190-800V功率MOSFET R6007KNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]7RDS(on)[O] VGS=Drive (Typ.)0.57 Detailed parameters...

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190-800V功率MOSFET R6007JNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]7RDS(on)[O] VGS=Drive (Typ.)0.6 Detailed parameters...

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190-800V功率MOSFET R6007ENJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]7RDS(on)[O] VGS=Drive (Typ.)0.57 Detailed parameters...

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190-800V功率MOSFET R6006JNJ 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]6RDS(on)[O] VGS=Drive (Typ.)0.72 Detailed parameters...

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190-800V功率MOSFET R6004KNX 罗姆半导体（上海）有限公司 MOSFETs

Drain-Source Voltage VDSS [V]600Drain Current ID [A]4RDS(on)[O] VGS=Drive (Typ.)0.9 Detailed parameters...

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