Index > Category List > Zener diode

Zener diode

Zener diode Supplier：深圳市永裕泰有限公司深圳市晶扬电子有限公司上海光宇睿芯微电子有限公司深圳市龙泰通电子有限公司芯佰微电子（北京）有限公司罗姆半导体（上海）有限公司

Zener diode Related classification： Power supply socket / NOR Gates / XOR Gates / AND Gates / OR Gates / NOT Gates(Inverters) / NAND Gates / Power Management /

brief introduction： Introduction:A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor&apos;s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

Zener diode Supplier quotation

View Album

silicon carbide S2305 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]450 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S2306 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]160 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S2307 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]45 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S2308 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]280 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S4001 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]30 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S4002 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]22 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S4003 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]17 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S4007 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]80 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S4008 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]60 Detailed parameters...

Price： 1.00
View details
View Album

silicon carbide S4101 罗姆半导体（上海）有限公司 MOSFETs

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]40 Detailed parameters...

Price： 1.00
View details