集合中芯网jihzxIC-电子元器件查询,电子元器件搜索引擎

Category List Product List

English

Update time：2022-12-01 09:38

Index > Product > 罗姆半导体（上海）有限公司 > MOSFETs > 12-150V MOSFET RQ6P015SP

12-150V MOSFET RQ6P015SP

12-150V MOSFET RQ6P015SP

罗姆半导体（上海）有限公司 - Company profile Click MOSFETs

Drain-Source Voltage VDSS [V]-100Drain Current ID [A]-1.5 View details 》

RQ6P015SP
encapsulation：RQ6P015SP
127
browsers：127
In production
cycle：In production
2021
time：2021
1.00
Reference price： 1.00

by Jihzx.com

Manufacturer
parameters
Data book

12-150V MOSFET RQ6P015SP Manufacturer introduction

12-150V MOSFET RQ6P015SP Data specification parameters

parameter list

technical parameter

Standard

Package parameters

SOT-457T

Dimensions

Meet the standard

AEC-Q101 (Automotive Grade)

Other parameters

Product Atlas

12-150V MOSFET RQ6P015SP

12-150V MOSFETalbum

Product overview

null

View all

12-150V MOSFET RQ6P015SP Data book

Please login to view and download the data book

MOSFET.pdf 2022-12-01 09:38 View

12-150V MOSFET RQ6P015SP Related devices

Device diagram

model

manufacturer

Name

encapsulation

describe

Price

PDF

silicon carbide S2206

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]120

1.00

silicon carbide S2301

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]80

1.00

silicon carbide S2303

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]80

1.00

silicon carbide S2305

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]450

1.00

silicon carbide S2306

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]160

1.00

silicon carbide S2307

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]45

1.00

silicon carbide S2308

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]1200Drain-source On-state Resistance(Typ.)[mO]280

1.00

silicon carbide S4001

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]30

1.00

silicon carbide S4002

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]22

1.00

silicon carbide S4003

silicon carbide

罗姆半导体（上海）有限公司

Drain-source Voltage[V]650Drain-source On-state Resistance(Typ.)[mO]17

1.00

Tool

Scan code wechat

Scan code official account